digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 T6410 series bidirectional triode thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit repetitive peak off-stag e voltage, gate open (t j = -65 to +110c) T6410b T6410d T6410m T6410n v drm 200 400 600 800 volts rms on-state current (conduction angle = 360, t c 65c) i t(rms) 40 amps peak non-repetitive surge current (one cycle, 60hz) i tsm 300 amps circuit fusing considerations (t j = -65 to +110c, t = 1.25 to 10ms) i 2 t 450 a 2 s peak gate power (pulse width = 10s) p gm 40 watts average gate power p g(av) 0.75 watts peak gate current (pulse width 10s) i gm 12 amps operating junction temperature range t j -65 to +110 c storage temperature range t stg -65 to +150 c stud torque 30 in. lb. thermal characteristics characteristics symbol max unit thermal resistance, junction to case r ? jc 0.9 c/w electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min typ max unit peak off state current (v d = v drm , gate open, t j = 110c) i drm - - 4 ma peak on-state voltage (either direction) (i tm = 100a peak) v tm - 1.5 2.0 volts dc gate trigger current (continuous dc) (v d = 12v, r l = 30 ? ) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) mt2(-), g(+) mt2(+), g(+); mt2(-), g(-), t c = -65c mt2(+), g(-); mt2(-), g(+), t c = -65c i gt - - - - - - 15 30 20 40 - - 50 80 50 80 125 240 ma dc gate trigger voltage (continuous dc), all trigger modes (v d = 12v, r l = 30 ? ) (v d = 12v, r l = 30 ? , t c = -65c) (v d = rated v drm , r l = 125? , t c = 110c) v gt - - 0.2 1.35 - - 2.5 3.4 - volts holding current (either direction) (v d = 12v, gate open, i t = 500ma, t c = 25c) (v d = 12v, gate open, i t = 500ma, t c = -65c) i h - - 25 - 60 100 ma gate controlled turn on time (v d = rated v drm , i t = 60a, i gt = 200ma, rise time = 0.1s) t gt - 1.7 3 s critical rate of rise of commutating voltage (commutating di/dt = 22a/ms, gate unenergized, v d = rated v drm , i t(rms) = 40a, t c = 65c) dv/dt(c) - 5 - v/s sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130205
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 T6410 series bidirectional triode thyristors mechanical characteristics case to-48 marking alpha-numeric polarity cathode is stud to-48 inches millimeters min max min max a 0.604 0.614 15.340 15.600 b 0.551 0.559 14.000 14.200 c 1.050 1.190 2.670 30.230 f 0.135 0.160 3.430 4.060 h - 0.265 - 6.730 j 0.420 0.455 10.670 11.560 k 0.620 0.670 15.750 17.020 l 0.300 0.350 7.620 8.890 q 0.055 0.085 1.400 2.160 t 0.501 0.505 12.730 12.830 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130205
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